Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus IGBTType Voltage-CollectorEmitterBreakdown(Max) Current-Collector(Ic)(Max) Current-CollectorPulsed(Icm) Vce(on)(Max)@VgeIc Power-Max SwitchingEnergy InputType GateCharge Td(on/off)@25°C TestCondition ReverseRecoveryTime(trr) OperatingTemperature MountingType
GT20N135SRA,S1E

GT20N135SRA,S1E

D-IGBT TO-247 VCES=1350V IC=40A

Toshiba Semiconductor and Storage

2718 3.37
- +

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Расследования

Tube - Active - 1350 V 40 A 80 A 2.4V @ 15V, 40A 312 W -, 700µJ (off) Standard 185 nC - 300V, 40A, 39Ohm, 15V - 175°C (TJ) Through Hole
GT30N135SRA,S1E

GT30N135SRA,S1E

D-IGBT TO-247 VCES=1350V IC=30A

Toshiba Semiconductor and Storage

2454 3.88
- +

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Расследования

Tube - Active - 1350 V 60 A 120 A 2.6V @ 15V, 60A 348 W -, 1.3mJ (off) Standard 270 nC - 300V, 60A, 39Ohm, 15V - 175°C (TJ) Through Hole
GT15J341,S4X

GT15J341,S4X

PB-F DISCRETE IGBT TRANSISTOR TO

Toshiba Semiconductor and Storage

3956 1.58
- +

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Расследования

GT15J341,S4X

Datasheet

Tube - Active - 600 V 15 A 60 A 2V @ 15V, 15A 30 W 300µJ (on), 300µJ (off) Standard - 60ns/170ns 300V, 15A, 33Ohm, 15V 80 ns 150°C (TJ) Through Hole
GT20J341,S4X(S

GT20J341,S4X(S

DISCRETE IGBT TRANSISTOR TO-220S

Toshiba Semiconductor and Storage

3047 1.79
- +

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Расследования

GT20J341,S4X(S

Datasheet

Tube - Active - 600 V 20 A 80 A 2V @ 15V, 20A 45 W 500µJ (on), 400µJ (off) Standard - 60ns/240ns 300V, 20A, 33Ohm, 15V 90 ns 150°C (TJ) Through Hole
GT30J341,Q

GT30J341,Q

IGBT TRANS 600V 30A TO3PN

Toshiba Semiconductor and Storage

2538 2.58
- +

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Расследования

Tray - Active - 600 V 59 A 120 A 2V @ 15V, 30A 230 W 800µJ (on), 600µJ (off) Standard - 80ns/280ns 300V, 30A, 24Ohm, 15V 50 ns 175°C (TJ) Through Hole
GT30J121(Q)

GT30J121(Q)

IGBT 600V 30A 170W TO3PN

Toshiba Semiconductor and Storage

3991 2.91
- +

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Расследования

GT30J121(Q)

Datasheet

Tube - Active - 600 V 30 A 60 A 2.45V @ 15V, 30A 170 W 1mJ (on), 800µJ (off) Standard - 90ns/300ns 300V, 30A, 24Ohm, 15V - - Through Hole
GT50J341,Q

GT50J341,Q

PB-F IGBT / TRANSISTOR TO-3PN IC

Toshiba Semiconductor and Storage

2098 3.14
- +

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Расследования

GT50J341,Q

Datasheet

Tube - Active - 600 V 50 A 100 A 2.2V @ 15V, 50A 200 W - Standard - - - - 175°C (TJ) Through Hole
GT40QR21(STA1,E,D

GT40QR21(STA1,E,D

DISCRETE IGBT TRANSISTOR TO-3PN(

Toshiba Semiconductor and Storage

3419 3.16
- +

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Расследования

GT40QR21(STA1,E,D

Datasheet

Tube - Active - 1200 V 40 A 80 A 2.7V @ 15V, 40A 230 W -, 290µJ (off) Standard - - 280V, 40A, 10Ohm, 20V 600 ns 175°C (TJ) Through Hole
GT40RR21(STA1,E

GT40RR21(STA1,E

PB-F IGBT / TRANSISTOR TO-3PN IC

Toshiba Semiconductor and Storage

3743 3.19
- +

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Расследования

GT40RR21(STA1,E

Datasheet

Tube - Active - 1200 V 40 A 200 A 2.8V @ 15V, 40A 230 W -, 540µJ (off) Standard - - 280V, 40A, 10Ohm, 20V 600 ns 175°C (TJ) Through Hole
GT50N322A

GT50N322A

PB-F IGBT / TRANSISTOR TO-3PN IC

Toshiba Semiconductor and Storage

2002 4.17
- +

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Расследования

GT50N322A

Datasheet

Tube - Active - 1000 V 50 A 120 A 2.8V @ 15V, 60A 156 W - Standard - - - 800 ns 150°C (TJ) Through Hole
GT50JR22(STA1,E,S)

GT50JR22(STA1,E,S)

PB-F IGBT / TRANSISTOR TO-3PN(OS

Toshiba Semiconductor and Storage

3456 4.19
- +

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Расследования

GT50JR22(STA1,E,S)

Datasheet

Tube - Active - 600 V 50 A 100 A 2.2V @ 15V, 50A 230 W - Standard - - - - 175°C (TJ) Through Hole
GT50JR21(STA1,E,S)

GT50JR21(STA1,E,S)

PB-F IGBT / TRANSISTOR TO-3PN(OS

Toshiba Semiconductor and Storage

3805 4.19
- +

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Расследования

GT50JR21(STA1,E,S)

Datasheet

Tube - Active - 600 V 50 A 100 A 2V @ 15V, 50A 230 W - Standard - - - - 175°C (TJ) Through Hole
GT40WR21,Q

GT40WR21,Q

DISCRETE IGBT TRANSISTOR TO-3PN(

Toshiba Semiconductor and Storage

2960 8.48
- +

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Расследования

GT40WR21,Q

Datasheet

Tray - Active - 1350 V 40 A 80 A 5.9V @ 15V, 40A 375 W - Standard - - - - 175°C (TJ) Through Hole
GT10G131(TE12L,Q)

GT10G131(TE12L,Q)

IGBT 400V 1W 8-SOIC

Toshiba Semiconductor and Storage

3806 0.00
- +

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GT10G131(TE12L,Q)

Datasheet

Tape & Reel (TR) - Obsolete - 400 V - 200 A 2.3V @ 4V, 200A 1 W - Standard - 3.1µs/2µs - - 150°C (TJ) Surface Mount
GT10J312(Q)

GT10J312(Q)

IGBT 600V 10A 60W TO220SM

Toshiba Semiconductor and Storage

2782 0.00
- +

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GT10J312(Q)

Datasheet

Tube - Obsolete - 600 V 10 A 20 A 2.7V @ 15V, 10A 60 W - Standard - 400ns/400ns 300V, 10A, 100Ohm, 15V 200 ns 150°C (TJ) Surface Mount
GT60N321(Q)

GT60N321(Q)

IGBT 1000V 60A 170W TO3P LH

Toshiba Semiconductor and Storage

2491 0.00
- +

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Расследования

GT60N321(Q)

Datasheet

Tube - Obsolete - 1000 V 60 A 120 A 2.8V @ 15V, 60A 170 W - Standard - 330ns/700ns - 2.5 µs 150°C (TJ) Through Hole
GT8G133(TE12L,Q)

GT8G133(TE12L,Q)

IGBT 400V 600MW 8TSSOP

Toshiba Semiconductor and Storage

2109 0.00
- +

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Расследования

GT8G133(TE12L,Q)

Datasheet

Tape & Reel (TR) - Obsolete - 400 V - 150 A 2.9V @ 4V, 150A 600 mW - Standard - 1.7µs/2µs - - 150°C (TJ) Surface Mount
GT50J121(Q)

GT50J121(Q)

IGBT 600V 50A 240W TO3P LH

Toshiba Semiconductor and Storage

3071 0.00
- +

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Расследования

GT50J121(Q)

Datasheet

Tube - Obsolete - 600 V 50 A 100 A 2.45V @ 15V, 50A 240 W 1.3mJ (on), 1.34mJ (off) Standard - 90ns/300ns 300V, 50A, 13Ohm, 15V - 150°C (TJ) Through Hole
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